The thin intrinsic layer and the high electron saturation velocity also gives 4H-SiC PiN diodes better reverse recovery characteristics over the silicon counterparts.
较薄的本征层以及碳化硅的高饱和电子漂移速度也使4H-SiC PiN二极管拥有优于硅PiN器件的反向恢复特性。
参考来源 - 4H·2,447,543篇论文数据，部分数据来源于NoteExpress
The reverse recovery properties of the freewheel diode are also distinctly improved.
续流二极管的反向恢复特性也得到了明显改善。
The reverse recovery time is also obtained by using charge-controlled method.
借助电荷控制法并引入有效寿命概念获得反向恢复时间。
There is no high reverse recovery related voltage spike in the rectifier diodes.
输出整流二极管无反向恢复电压尖峰；
应用推荐